Vertical GaN Trench MOSFETs With HfO₂/Al₂O₃ Layered Gate Dielectric
Year: 2025
Type: article
Authors: E. Brusaterra, E. Bahat Treidel, P. Paul, M. Damian Cuallo, F. Brunner, I. Ostermay, O. Hilt
Institution: Ferdinand-Braun-Institut
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1332077954, G6982286564
OpenAlex ID: W4413120386