Work

Investigation of Time-Dependent Dielectric Breakdown on Commercial SiC MOSFETs Using Constant-Voltage and Pulse-Voltage

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3594603

Authors: Michael Jin, Hengyu Yu, Monikuntala Bhattacharya, Jiashu Qian, Shiva Houshmand, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal

Institutions: The Ohio State University, Ford Motor Company (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413120803

FWCI:

Cites: 32

Cited by:

Related to: 10