In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor
Year: 2026
Type: article
Abstract: Organic semiconductors (OSCs) are leading materials for next-generation optoelectronic devices. Effective charge transport in devices often requires electronic doping of OSCs. Conventional methods using molecular dopants or metal salts often suffer from poor efficiency, undesirable side products, and require additives and prolonged incubation. Under device operational conditions, these undesirable side products and additives lead to degradation in device performance. Here, an in situ regenerative adduct-assisted (IRAA) doping is presented, which is rapid, metal-ion-free, and requires no additives for dopant stabilization, enabling clean and efficient doping of various OSCs. Spectroscopic analyses reveal a self-regenerating adduct as the active doping species. The simplicity of the doping method and the range of materials available open new avenues for the development of diverse electronic-doping strategies, providing a scalable and universal approach to doping OSC-based hole-transporting layers for various types of optoelectronic devices, including halide perovskite solar cells.
Source: Advanced Materials
DOI: 10.1002/adma.73351
Authors: Brijesh K. Patel, Arya Vidhan, Shubham Gupta, Vaishali Arunachalam, Simantini Nayak, Neeraj Bhatt, Ravi Shankar Singh, Shaibal K. Sarkar, Pabitra K. Nayak
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $6,070
Funders: Princeton University, Tata Institute of Fundamental Research, Ministry of New and Renewable Energy India, Department of Science and Technology, Ministry of Science and Technology, India, Institute of Minerals and Materials Technology, Academy of Scientific and Innovative Research, Science and Engineering Research Board
Awards: G3891155077, G4117147796, G455141431
OpenAlex ID: W4413121320