Work

A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology

Year: 2025

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/ims40360.2025.11103891

Authors: Qiang Yu, Ibukunoluwa Momson, Ali Farid, Georgios Dogiamis, Samuel Bader, Sing-Wai Tang, Jeffrey Garrett, Derek Thomson, Linli Xie, Marko Radosavljevic, Heli Vora, Michael Beumer, Marc Tiebout, Gerhard Knoblinger, Said Rami, Han Wui Then

Institution: Intel (United States)

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413121999

FWCI: 9.434

Cites: 11

Cited by: 4

Related to: 10