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10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology

Year: 2025

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/ims40360.2025.11103971

Authors: Hsien-Chin Chiu, Chia-Han Lin, Chia-Hao Yu, Chong-Rong Huang, Hsuan-Ling Kao, Hsiang-Chun Wang, Po-Tsung Tu, Barry Lin

Institutions: Chang Gung University, Industrial Technology Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413122267

FWCI: 2.591

Cites: 6

Cited by: 1

Related to: 10