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E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-μm GaAs pHEMT Technology

Year: 2025

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/ims40360.2025.11103904

Authors: Zhenbei Li, Qiuze Yu, Jian Zhang

Institution: Wuhan University

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413122312

FWCI: 6.901

Cites: 11

Cited by: 3

Related to: 10