Work

Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/ims40360.2025.11103980

Authors: Enrico Zanoni, Andrea Carlotto, Francesco De Pieri, Manuel Fregolent, Marco Saro, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini

Institution: University of Padua

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Office of Naval Research Global

Award: G7333860958

OpenAlex ID: W4413122560

FWCI: 7.771

Cites: 22

Cited by: 3

Related to: 10