Work

A 16-Way 115-129 GHz High Power Amplifier with 20.9 dBm $\mathrm{P}_{\text{SAT }}$ and 17.6 dBm $\mathrm{P}_{1 \text{dB}}$ in 40 Nm Bulk CMOS

Year: 2025

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/ims40360.2025.11103913

Authors: Jaegwan Kim, Munkyo Seo

Institution: Sungkyunkwan University

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Korea Institute for Advancement of Technology

Award: G3927570945

OpenAlex ID: W4413122803

FWCI: 4.717

Cites: 7

Cited by: 2

Related to: 10