Work

Efficient DC-coupled linear 60-GBd EML-based O-band transmitter

Year: 2025

Type: article

Abstract: O-band transmitters are key to current and next-generation communication links. In this paper, the authors present a transmitter based on an InGaAlAs multi-quantum well (MQW) electroabsorption modulated laser (EML) and a 130 nm SiGe BiCMOS driver integrated circuit (IC). The functionality and architecture of both ICs are discussed, including the co-design aspects deriving from the DC-coupled interface, with a particular focus on the driver's high immunity to the EAM photocurrent and capability to supply a very wide bias voltage range to the EAM. The proposed transmitter is able to send 60 GBd PAM4 signals with an extinction ratio (ER) of 8 dB at a power efficiency of 4.3 pJ/bit. Additionally, it is able to transmit up to 80 GBd NRZ signals and is even sufficiently linear to transmit PAM8 signals at 40 GBd, showcasing the transmitter potential in a wide range of applications.

Source: Optics Express

DOI: 10.1364/oe.572093

Authors: Kieran De Bruyn, Michael Theurer, Ye Gu, Martin Moehrle, Peter Ossieur, Johan Bauwelinck

Institutions: Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Fraunhofer-Gesellschaft

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: gold

Estimated APC paid: $2,270