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A DHTOL Test-Based Methodology to Investigate the Switching Reliability of GaN HEMTs Under Repeated Drain Voltage Ringing

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3598075

Authors: Muhammed Ajmal C N, Bhanu Teja Vankayalapati, Sandeep R. Bahl, Fei Yang, Akshay Vijayrao Deshmukh, Bilal Akin

Institutions: The University of Texas at Dallas, Texas Instruments (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: Texas Instruments

OpenAlex ID: W4413155597

FWCI:

Cites: 36

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Related to: 10