Work

A High-Reliability Bootstrap Circuit for High-Voltage GaN Half-Bridge Gate Driver

Year: 2025

Type: conference-paper

Source: International Conference on Electronics Technology (ICET)

DOI: 10.1109/icet64964.2025.11102959

Authors: Ruijie Shao, Bin Liu, Shun Wang

Institution: Nuclear Power Institute of China

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4413179671

FWCI: 2.358

Cites: 9

Cited by: 1

Related to: 10