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High Performance Wide Trench Fin-Shaped Gate CSTBT with Split Gate Structure

Year: 2025

Type: conference-paper

Source: International Conference on Electronics Technology (ICET)

DOI: 10.1109/icet64964.2025.11103418

Authors: Shuyang Huang, Jinping Zhang, Zhengyu Lang, Yazheng Liu, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Basic and Applied Basic Research Foundation of Guangdong Province

Award: G4713988197

OpenAlex ID: W4413180221

FWCI:

Cites: 8

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Related to: 10