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Dielectric Engineering to Enhance the Breakdown Voltage of $\boldsymbol{\beta}-\mathbf{G a}_{2} \mathbf{O}_{3}$ MOSFET

Year: 2025

Type: conference-paper

Source: IEEE International Conference on Nanotechnology (IEEE-NANO)

DOI: 10.1109/nano63165.2025.11113738

Authors: Akash Patnaik, Mukul Gupta, Pankaj Sharma

Institutions: Indian Institute of Information Technology Design and Manufacturing Jabalpur, University Grants Commission, Department of Atomic Energy

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413180492

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Cites: 11

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Related to: 10