Work

High-performance type-I Sn-doped-Ga2O3/SnSe2 heterojunction photodetectors enabled by Fowler–Nordheim tunneling

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0282601

Authors: Zibin Huang, Zhenfeng Zhang, Yanan Wang, Xun Yang, Shan Huang, Yifan Zhang, Hanzhe Zhang, Man Hoi Wong, Zhuangfei Zhang, Shichen Su

Institutions: South China Normal University, Zhengzhou University, Hong Kong University of Science and Technology, Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: 基于ZnO/ZnMgO量子阱的高阶多光子上转换激发紫外激光的实现及机理研究, G4859653343, G5260663042

OpenAlex ID: W4413189988

FWCI: 0.478

Cites: 44

Cited by: 3

Related to: 10