Optimization of ZnO thickness for high-performance thin-film transistors and their application in 2T0C DRAM memory cells
Year: 2025
Type: conference-paper
Abstract: Zinc oxide (ZnO) thin-film transistors (TFTs) have garnered significant attention in recent years due to their high field-effect mobility (μFE), low power consumption, and excellent optical transparency, making them promising candidates for applications in displays, sensors, and memory devices. The thickness of the ZnO active layer plays a critical role in determining key device parameters, including threshold voltage (Vth), field-effect mobility (μFE FE), subthreshold swing (SS), and current on/off ratio (ION/IOFF). However, a comprehensive understanding of the correlation between ZnO thin-film thickness and TFT performance, particularly in terms of electrical stability and memory applications, remains limited. To bridge this gap, this study systematically investigates the influence of ZnO thin-film thickness (14–20 nm) on TFT performance and explores its feasibility in a capacitorless 2T0C DRAM architecture. The findings provide valuable theoretical insights and experimental validation for optimizing ZnO TFTs for next-generation memory applications.
Authors: Jiayu Meng, Feiyu Mao, Yue Cheng, Xiaofang Wang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4413190959