Ferroelectric modulated giant valley polarization and half metallicity in 2D RuBrF/Sc2CO2 multiferroic heterostructure for non-volatile memory applications
Year: 2025
Type: article
Abstract: Controlling two-dimensional (2D) valleytronics is challenging for information technology. This study shows that a ferroelectric-assisted layer can effectively enable non-volatile control of 2D valleytronics. Using first-principles simulations, we find that different polarization states in the Sc2CO2 layer cause the RuBrF monolayer to transition from a semiconductor to a half-metal, while also changing magnetic anisotropy from in-plane to out-of-plane. In the −P state, the system behaves as a ferromagnetic semiconductor with a spontaneous valley polarization of 329 meV. In the +P state, it becomes a ferromagnetic half-metal, blocking valleytronics. This enables electro-reversible control of valley electrons in the RuBrF/Sc2CO2 heterostructure. We explain the modulation of magnetic anisotropy and valley polarization using second-order perturbation theory and the k⋅p model. Our work offers a promising approach for non-volatile valleytronic control at the nanoscale, aiding the design of new devices.
Source: Journal of Applied Physics
DOI: 10.1063/5.0288245
Authors: Chao Jin, Chang Liu, Fengzhu Ren, Bing Wang, Minglei Jia, Huimin Shen, Xiaoying Liu, Qinfen Gu
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W4413194477