Work

Negative differential resistance in memristive systems: historical evolution, mechanisms and neuromorphic applications of niobium oxide devices

Year: 2025

Type: article

Abstract: cycles) negative differential resistance with biophysically plausible spiking dynamics-enabled by its dual current-controlled and thermally driven mechanisms-making it ideal for energy-efficient neuromorphic primitives. This paper reviews the complex phenomenon of NDR and its applications in niobium oxide memristors while analyzing its potential future applications in electronic systems. By outlining the NDR effect and its applications in niobium oxide memristors, this paper aims to provide valuable insights for researchers in the field.

Source: Nanoscale

DOI: 10.1039/d5nr02491a

Authors: Hongyi Lu, Shiyu Xie, Weijian Zhang, Yue Chen, Jianming Tao, Chinmayee Mandar Mhaskar, Ayan Roy Chaudhuri, Yingbin Lin, Jiaxin Li, Sanjay Mathur, Zhigao Huang

Institutions: Fujian Normal University, University of Cologne, Indian Institute of Technology Kharagpur

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Fuzhou Science and Technology Bureau, Royal Society of Chemistry, National Natural Science Foundation of China, Natural Science Foundation of Fujian Province, Ministry of Education, India, China Scholarship Council, Scheme for Promotion of Academic and Research Collaboration

Awards: G1275387843, G146589514, G1713123064, G2819422939, G3613187157, G564086598, G6048286651, G6984468610, G702266414

OpenAlex ID: W4413198547

FWCI: 2.771

Cites: 235

Cited by: 12

Related to: 10