Work

Design, Investigation and Spacer optimization of a Tri metal- Stacked Gate Si-SiGe GAA cylindrical- Nanotube Field Effect Transistor (TM-SG-NTFET)

Year: 2025

Type: conference-paper

DOI: 10.1109/eaic66483.2025.11101492

Authors: Abhishek Chauhan, Ashish Raman

Institution: Dr. B. R. Ambedkar National Institute of Technology Jalandhar

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413205000

FWCI: 4.717

Cites: 24

Cited by: 2

Related to: 10