Work

Effect of Capping Layer Under Forming Gas Anneal for Back-End-of-Line Oxide Semiconductor FETs

Year: 2025

Type: conference-paper

Source: Conference digest

Authors: Mamidala Saketh Ram, Antonio La Porta, Valeria Bragaglia, Elisa Zaccaria, Donato Falcone, Wooseok Choi, Bert Jan Offrein

Institution: IBM Research - Zurich

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413205070

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Related to: 10