Work

Comprehensive Evaluation of Device Parameter Variations and Their Impact on 8nm Gate Length SOI n-FinFET Performance Characteristics

Year: 2025

Type: conference-paper

DOI: 10.1109/eaic66483.2025.11101387

Authors: Sahil Koundal, Gagnesh Kumar

Institution: National Institute of Technology Hamirpur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413205589

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Cites: 12

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Related to: 10