Thin ferroelectric materials for memory devices
Year: 2025
Type: article
Abstract: Ferroelectric materials have emerged as key candidates for next-generation electronics, offering nonvolatile switching, low-power operation, and multifunctional behavior. Realization of their full potential in complementary metal–oxide semiconductor-based technologies demands a careful balance between performance, scalability, and industrial feasibility. This perspective provides a critical evaluation of prominent ferroelectric material classes, highlighting their unique advantages and persistent integration challenges. We emphasize the central role of atomic-scale structure that dictates functional behavior and discuss the importance of advanced metrology, particularly scanning transmission electron microscopy, for direct visualization of domain dynamics, defects, and interfacial phenomena, all of which influence ferroelectric properties. We identify current limitations in fabrication, materials design, and property benchmarking, and outline strategic pathways to close knowledge gaps and accelerate the transition of ferroelectrics from fundamental studies to scalable, real-world applications.
Source: 2D Materials
Institution: Cornell University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,895
OpenAlex ID: W4413210256