Work

Efficiency Enhancement and EMI Mitigation in GaN-HEMTs Using a Single-Switch Resonant Gate Driver Circuit

Year: 2025

Type: article

Source: IEEE Transactions on Consumer Electronics

DOI: 10.1109/tce.2025.3597551

Authors: Vikram Kumar Saxena, Kundan Kumar, Benjamin A. Shimray

Institutions: National Institute of Technology Manipur, National Institute of Technology Jamshedpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413212973

FWCI:

Cites: 30

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Related to: 10