Work

A Modified 1/ f Noise Model for Narrow-Width Si p-MOSFETs With Shallow Trench Isolation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3595852

Authors: Yi Jiang, Kai Chen, Rui Su, Ruocheng Yang, Dawei Gao, Junkang Li, Rui Zhang

Institution: Zhejiang University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3642759932

OpenAlex ID: W4413213007

FWCI: 0.462

Cites: 33

Cited by: 2

Related to: 10