Work

The ESD Robustness of Schottky-Gate p-GaN HEMT Under Different States

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3592633

Authors: Yijun Shi, Dongsheng Zhao, Zhipeng Shen, Lijuan Wu, Liang He, Xingchuan Jiang, Guanglin Yang, Qingzong Xiao, Xinghuan Chen, Yuan Chen, Guoguang Lu

Institutions: China Electronic Product Reliability and Environmental Test Institute, Changsha University of Science and Technology

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, State Key Laboratory of Marine Environmental Science

Awards: G2002730287, G3337357, G8610215793

OpenAlex ID: W4413213019

FWCI: 1.813

Cites: 19

Cited by: 8

Related to: 10