Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Year: 2025

Type: article

Abstract: 4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with α particles from a 84 210 Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

Source: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

DOI: 10.1016/j.nima.2025.170873

Authors: Tao Yang, Ben Sekely, Yashas Satapathy, Greg Allion, Philip Barletta, Carl Haber, Steve Holland, John F. Muth, Spyridon Pavlidis, Stefania Stucci

Institutions: Lawrence Berkeley National Laboratory, North Carolina State University, Brookhaven National Laboratory

Language: English

Topic: Particle Detector Development and Performance

Subfield: Nuclear and High Energy Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,620

Funders: National Science Foundation, U.S. Department of Energy, North Carolina State University, Office of Science, Division of Electrical, Communications and Cyber Systems, High Energy Physics, Lawrence Berkeley National Laboratory

OpenAlex ID: W4413214808