Work

Study on the effects of rotational and heating methods on the melt flow and crystal growth rate in SiC growth systems by the TSSG method

Year: 2025

Type: article

Source: CrystEngComm

DOI: 10.1039/d5ce00418g

Authors: Tai Li, Hao Yang, Minpeng Lei, Guangxin Zhang, Mengmeng Yuan, Guoqiang Lv, Wenhui Ma

Institutions: Kunming University of Science and Technology, Yunnan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413224607

FWCI: 0.453

Cites: 55

Cited by: 2

Related to: 10