InGaN/GaN/AlN P-Channel MOS-HFETs with InAlGaN Back-Barrier and Multi-Finger Drain Field-Plate
Year: 2025
Type: article
Abstract: This work reports novel InGaN/GaN/AlN p-channel metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with InAlGaN back-barrier and multi-finger drain field-plate (MF-DFP). The present design has achieved a record-high three-terminal on-state drain-source breakdown voltage (BV DS ) of −890 V. A low specific on-resistance (R on,sp ) of 26.3 Ω-cm2 was obtained by implementing an Mg-doped p++-InGaN capper. A high-k and wide-gap Al2O3 was deposited as gate dielectric and surface passivation at the same time by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Devices with conventional DFP (C-DFP) and without DFP have been studied in comparison. The present design with MF-DFP (C-DFP/without DFP) has demonstrated superior maximum drain-source current density (I DS,max) of −18.1 (−17.3/−19.5) mA/mm, on/off current ratio (I on /I off ) of 2.0 × 107 (1.5 × 107/1.1 × 106), two-terminal off-state gate-drain breakdown voltage (BV GD ) of 925 (850/680) V, and BV DS of −890 (−805/−640) V, respectively. The present design is promising for high-voltage complementary power-switching circuit applications.
Authors: Ching-Sung Lee, Jian-Hong Ke, Chung-Liang Liao, Wei-Chou Hsu
Institutions: Feng Chia University, National Cheng Kung University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $1,950
OpenAlex ID: W4413224671