Long spin lifetimes of charge carriers in rubrene crystals due to fast transient-localization motion
Year: 2025
Type: article
Abstract: Field-induced electron spin resonance provides valuable insights into the interplay between spin and charge dynamics in organic semiconductors. We apply this technique to ion-gel-gated capacitors and conventional field-effect transistors to study the temperature-dependent carrier dynamics of high-mobility rubrene single-crystals. Unlike previous measurements on other molecular and polymer semiconductors, we observe remarkably long spin relaxation times-on the order of microseconds-persisting from room temperature down to 15 K. Such long relaxation times are caused by the rapid transient-localization motion of charge carriers, which induces efficient motional narrowing. Additionally, by leveraging the high injection efficiency of ion-gel-gated devices, we observe spin lifetimes shortening at high carrier concentrations. This is attributed to emerging spin-spin dipolar interactions and can be modelled using an approach adapted from fluid-phase nuclear magnetic resonance. Our work demonstrates that field-induced electron spin resonance provides a powerful probe of the transient-localization physics of high-mobility molecular crystals.
Source: Nature Communications
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Awards: Nanoscale characterisation and decoupling of charge and heat transport across interfaces in novel, molecular thermoelectric materials, G4137521004, Spin-charge conversion and spin caloritronics at hybrid organic-inorganic interfaces, Harnessing vibration-induced enhancement of transport in functional materials with soft structural dynamics
OpenAlex ID: W4413257408