Work

Electric field modulation and hot-electron suppression in AlGaN/GaN HEMTs on Si using a hybrid p-NiO RESURF-FP termination

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/adfc7a

Authors: Ruiling Gong, Hui Guo, Junyang An, Yanghu Peng, Guang Qiao, Na Sun, Pengfei Shao, Jiandong Ye, Yugang Zhou, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen

Institutions: Nanjing University, Xiamen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Jiangsu Province

Awards: G110625647, G1785269170, G6771130816

OpenAlex ID: W4413274514

FWCI: 1.55

Cites: 34

Cited by: 5

Related to: 10