Work

Large-Signal Performance of 0.1-μm AlGaN/GaN HEMT on SiC Under EHF Stress for V-Band

Year: 2025

Type: article

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2025.3595974

Authors: Shivansh Awasthi, Heng-Tung Hsu, Yi-Fan Tsao, Ping-Hsun Chiu, Vikas Kumar, Ankur Gupta

Institutions: National Yang Ming Chiao Tung University, Indian Institute of Technology Delhi

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G1082936191, G1325806520, G177094332, G3268810320, G708697144

OpenAlex ID: W4413277287

FWCI: 0.646

Cites: 30

Cited by: 2

Related to: 10