Work

High-Sensitivity Solar-Blind UV Phototransistor With Binary AlN/GaN Interface-Layer-Engineered AlGaN Heterojunction

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3599948

Authors: Zhuoya Peng, Zesheng Lv, Shouqiang Yang, Yv Yin, Jiabing Lu, Hao Jiang

Institution: Sun Yat-sen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G4127732516

OpenAlex ID: W4413277573

FWCI: 1.292

Cites: 35

Cited by: 4

Related to: 10