Work

Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3599696

Authors: Yi-Huang Chen, Sheng-Yao Chou, Ming-Chen Chen, Ting-Chang Chang, Yu-Bo Wang, Yong-Ci Zhang, Chung-Wei Wu, Cheng-Hsien Lin, Jui-Tse Hsu, Ya-Huan Lee, Yu-Hsiang Tsai, Tsung-Ming Tsai

Institutions: National Sun Yat-sen University, National Tsing Hua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science and Technology Council, Defence Science and Technology Laboratory

Awards: G1694755385, G1858279378

OpenAlex ID: W4413277588

FWCI: 1.292

Cites: 33

Cited by: 4

Related to: 10