Work

Uniform Current Density and Thermal Distribution in Vanadium-Doped 4H-SiC PCSS Based on Dual-Beam Synchronous Excitation

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3599539

Authors: Shengtao Chen, Ming Xu, Ruidong Lv, Li Sun, Rujun Liu, Mi Pang, Zhuo Dai

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Hunan Association for Science and Technology

Awards: G3379402507, G4460417442, G6811542213

OpenAlex ID: W4413277846

FWCI: 0.462

Cites: 25

Cited by: 2

Related to: 10