Year: 2025
Type: article
Abstract: Two types of nanoscale structures with amorphous GeSex functional layers were fabricated to assess the elemental segregation in devices stressed by the application of an electric field and/or a temperature gradient. An electric field of 1.3 × 108 V m−1 and a current density of 1.5 × 106 A cm−2 resulted in the pronounced segregation of Ge toward the cathode with lesser segregation of Se in the same direction. The segregation direction reversed upon reversal of the field consistent with the electromigration mechanism. The electric field/current stress also produced voids forming in the proximity of the anode and noticeable concentration of W in the chalcogenide layer. Stressing the structures in a temperature gradient of 3 × 109 K m−1 at 630 K average temperature did not affect the elemental distributions.
Source: Journal of Applied Physics
DOI: 10.1063/5.0276175
Authors: Q. Xu, Y. Zou, J. Meng, P. Yeoh, J. A. Bain, M. Skowronski
Institution: Carnegie Mellon University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W4413289054