Process Development and Formation Chemistry of BaZrS3 Thin Films via a Two-Stage PVD Process
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Chalcogenide perovskites like BaZrS 3 are promising candidates for tandem solar cells due to their stability, nontoxicity, and ideal bandgap of ∼1.8 eV. However, their thin-film fabrication remains challenging due to the high reactivity of Ba and Zr, leading to oxidation and phase impurities. Here, we report on further development of a two-step physical vapor deposition process that enables BaZrS 3 thin films with high crystallinity (FWHM of the XRD peak corresponding to the (121) plane of BaZrS 3 decreases by 38%) and exceptionally low oxygen content (3% in bulk), which is difficult to achieve with conventional methods. The process involves cosputtering of Ba–Zr metal precursors followed by thermal treatment in a sulfur-rich atmosphere, with a SnS capping layer protecting the precursor from oxidation during transfer and annealing. A comparative study of cosputtered and layered metal precursors reveals that intermixing of Ba and Zr during deposition is essential for uniform sulfurization and improved crystallinity. Introducing a Zr interlayer effectively prevents reactions between the metal precursor and the substrate, enabling BaZrS 3 growth on silicon, quartz, and metallic substrates while minimizing the impurity phase formation. By investigating the reaction mechanism, differential metal reactivity, and detrimental role of ZrO 2, we demonstrate that protecting Zr from oxidation is crucial for phase purity and film quality. We demonstrate that slowing down the evaporation of the SnS capping layer using additional SnS vapor during sulfurization effectively blocks oxygen diffusion into the film, resulting in highly crystalline BaZrS 3 thin films. These findings provide fundamental insights into BaZrS 3 synthesis and offer a scalable approach for integrating chalcogenide perovskites into photovoltaic applications.
Source: ACS Applied Energy Materials
Institutions: Uppsala University, Indian Institute of Technology Bombay
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W4413292741
