Work

Emerging Ferroelectric Materials for High-Performance Next-Generation Memory Devices

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01058

Authors: Muhammad Faizan, Zhengfang Qian, Hua Zhu, Shuting Fan, Naeem Abas, Shoaib Rauf, Ghulam Abbas Khan, Hassan Ul Huzaibi

Institutions: Shenzhen University, University of Gujrat

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China, Science and Technology Planning Project of Shenzhen Municipality

Awards: G2227420725, G4291544757, G4922263395

OpenAlex ID: W4413304870

FWCI: 3.38

Cites: 262

Cited by: 15

Related to: 10