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SE-CSA Based IN-D SG Disturb Free Volatile Static Memory Using Fin-FET with Steep Subthreshold Sleep

Year: 2025

Type: article

Source: The International Journal of Maritime Engineering

DOI: 10.5750/ijme.v167ia2(s).1653

Authors: Shyam Shyam, V. Vijayakumar

Institution: Sathyabama Institute of Science and Technology

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413316590

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