Work

Self-Limited Ti Silicide Contact at 350 °C for Dual-Side Wafer-Level Integration

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3600066

Authors: Hongxu Liao, Xuanyu Jia, Fangze Liu, Chenyao Huang, Xiangyu Cui, Xijun Zhou, Shunli Xu, Jieyin Zhang, Jianjun Zhang, Heng Wu, Xiaoyan Xu, Xia An, Ming Li, Ru Huang

Institutions: Peking University, Chinese Academy of Sciences, Institute of Physics

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Beijing Key Discipline Development Program

Awards: G1174218347, G4463477175, G8978571234

OpenAlex ID: W4413319002

FWCI: 0.77

Cites: 24

Cited by: 2

Related to: 10