Work

High-On/Off-Current-Ratio AlGaN/GaN HEMTs via Van Der Waals Epitaxy GaN With a BN Inset Layer

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3600447

Authors: Haoran Zhang, Jing Ning, Shiyu Li, Xue Shen, Yaning Zhang, Ziyan Wan, Dong Wang, Yue Hao, Jincheng Zhang

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Science Fund for Creative Research Groups, Yunnan Key Research and Development Program, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, National Science Fund for Distinguished Young Scholars, Natural Science Basic Research Program of Shaanxi Province

Awards: G215352167, G252737441, G3932956480, G4027415275, G4613421360, G7245038778, G748733647, G7908742776

OpenAlex ID: W4413319023

FWCI: 0.934

Cites: 35

Cited by: 3

Related to: 10