Work

Is There a ZTC Biasing Point in the Leading-Edge FET Intrinsic Gain gmrDS?

Year: 2025

Type: conference-paper

Source: International Young Engineers Forum on Electrical and Computer Engineering (YEF-ECE)

DOI: 10.1109/yef-ece66503.2025.11117520

Authors: Miguel Coelho, Rafael Martins, Pedro Toledo, Alexandra Matos, Rafael Ferreira, Boyapati Subrahmanyam, Luis B. Oliveira, José Soares Augusto, João P. Oliveira

Institutions: University of Lisbon, Universidade Nova de Lisboa

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413320917

FWCI: 4.65

Cites: 17

Cited by: 2

Related to: 10