Work

Pulsed mode atomic layer etching of ScAlN using Cl2/C2H4/Ar

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0282582

Authors: Zhuanli Ma, Ke Wei, Hongling Xiao, Sheng Zhang, Xiaojuan Chen, Jiaqi Guo, Jianchao Wang, Kaiyu Wang, Xiaoqiang He, Xinguo Gao, Yingkui Zheng, Xinhua Wang, Sen Huang, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3372063648, G4437972967

OpenAlex ID: W4413329479

FWCI: 0.453

Cites: 36

Cited by: 2

Related to: 10