Work

In situ nitrogen doping of β -Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0288080

Authors: Yaoping Lu, Ancang Yang, Titao Li, Jinxin Zhang, Lemin Jia, Duanyang Chen, Hongji Qi, Haizhong Zhang, Xiaoqiang Lu

Institutions: Fuzhou University, Kunming University of Science and Technology, Lingnan University, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Fujian Province

Awards: G1751233889, G5264398444

OpenAlex ID: W4413342209

FWCI: 1.275

Cites: 31

Cited by: 8

Related to: 10