Work

Defect-dominated resistive switching of 2D MoTe2 nanosheets for artificial synapses and decimal arithmetic

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0279994

Authors: Shuangjing Yan, Mei Li, Didi Zhang, Jingxi Gou, Yanyan He, Yuda Zhao, Wenjing Jie

Institutions: Sichuan Normal University, Zhejiang University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G6128899596, G6675245991, G8673586090

OpenAlex ID: W4413350448

FWCI: 0.455

Cites: 38

Cited by: 2

Related to: 10