Uniform doping for MoS2/MoTe2 van der Waals junction field-effect transistors with ideal subthreshold slope
Year: 2025
Type: article
Abstract: Two-dimensional (2D) semiconductor-based junction field-effect transistors (JFETs) have emerged as vital architectures for next-generation low-power electronics due to their gate-dielectric-free structure and near-ideal subthreshold swing (SS) potential. Although doping strategies, such as defect engineering, chemical modification, etc., can further enhance the performance of JFETs, complex techniques and uniformly-doping hinder their further applications. Here, we propose a low-power MoS2/MoTe2 JFET utilizing a pre-deposited Au film to dope the gate layer of MoTe2, which can uniformly increase the work function of MoTe2 and thus elevate heterostructure barrier heights. This method offers strong repeatability, avoids localized states on channel material, and is compatible with IC manufacturing. The JFETs achieves a near-ideal SS of 62.5 mV/dec, mobility of 350 cm2V⁻1s⁻1, high current on/off ratio of 107, low gate leakage of 10⁻12 A, and low pinch-off voltage of –0.1 V. This strategy provides a universal and simple strategy for low-power circuits.
Source: National Science Open
DOI: 10.1360/nso/20250034
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
Awards: G1064652382, G1405893087, G1773702449, G2368488553, G2710602289, G2787848616, G2825245692, G3462009447, G368482598, G4094895696, G4526706400, G4727783744, G5084679597, G5325463001, G5443755614, G5654575035, G5659464103, G5850334540, G601832336, G6259247475, G6460860224, G6471308458, G6614641478, G7114330640, G7621806962
OpenAlex ID: W4413372401