Work

Defect and electrical characteristics of 4H-SiC junction barrier Schottky diodes under high-energy electron irradiation at different fluences

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/adfb89

Authors: Wenlong Liu, Yidan Tang, Chaoming Liu, Zheng Hu, Yun Bai, Xiaoli Tian, Xuan Li, Jilong Hao, Yiping Xiao, Mingxue Huo, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences, Harbin Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G5080138891, G6947546890

OpenAlex ID: W4413383383

FWCI: 0.225

Cites: 53

Cited by: 1

Related to: 10