Work

A Continuous Model for Ferroelectric-FETs for Computing in Memory

Year: 2024

Type: conference-paper

Source: International Academic Exchange Conference on Science and Technology Innovation (IAECST)

DOI: 10.1109/iaecst64597.2024.11117350

Authors: Jinwei Lin, Wenjia Xu, Xinyu Li, Yue Ma, Sheng Zhang

Institutions: Tsinghua Shenzhen International Graduate School, Tsinghua University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413392823

FWCI:

Cites: 9

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Related to: 10