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Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) β -Ga2O3 substrate

Year: 2025
Type: article
Abstract: This study investigates minority electron diffusion length and carrier recombination phenomena in p-type 300 nm-thick Ga2O3 films homoepitaxially grown over a (001) tin-doped β-Ga2O3 conductive substrate. This research is novel due to its systematic and near-simultaneous measurements in the top layer of a p-Ga2O3/n-Ga2O3 structure using independent electron beam-induced current and cathodoluminescence techniques. Previous work primarily focused on heteroepitaxial architectures or gallium oxide grown over insulating substrates of the same material. In this work, the activation energies related to point defects in gallium oxide were extracted from temperature-dependent incremental electron beam irradiation experiments to gain insight into the defect landscape and its influence on minority carrier transport and recombination dynamics.
DOI: 10.1063/5.0288118
Authors: Gabriel Marciaga, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Leonid Chernyak
Institutions: University of Central Florida, University of Florida, Centre National de la Recherche Scientifique, Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, Groupe d’Étude de la Matière Condensée, Tel Aviv University
Language: English
Open Access status: hybrid
Estimated APC paid: $3,500
Funders: National Science Foundation, U.S. Department of Defense, North Atlantic Treaty Organization, United States - Israel Binational Science Foundation, Agence Nationale de la Recherche, Division of Electrical, Communications and Cyber Systems
Awards: Carrier recombination dynamics in III-N photodetectors, G3430284720, G382770547, G4537631710, G5797814255, G6615639042, INTERACTION OF IONIZING RADIATION WITH MATTER, NSF-BSF: Electrical mitigation of radiation-induced defects in InAs/GaSb structures for infrared sensing
OpenAlex ID: W4413415922
FWCI: 0.482
Cites: 41
Cited by: 3
Related to: 10