Work

Interface Barrier-Modulated Neuromorphic Behavior in Mo/CdIn 2 S 4 /ZnO–Al Structures Based on Metastable Defects

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Neuromorphic computing is an increasingly accelerating research field that still faces several hardware challenges, thus driving materials science research. This contribution presents prototype neuromorphic devices based on cadmium–indium sulfide (CdIn 2 S 4 ). We have found that the compound, previously studied in photocatalysis and photovoltaics, has yet-to-be-explored memristive properties. We manufactured a series of devices with varying stoichiometry and unveiled their switching and neuromorphic behavior. Our measurements indicate that barriers on the CdIn 2 S 4 interfaces and native CdIn 2 S 4 metastable defects control the behavior of the devices. Due to its compelling optoelectronic properties, CdIn 2 S 4 creates vast opportunities to use it as an active layer for optically controlled neuromorphic devices. We propose a disparate switching mechanism based on metastable defects that could be utilized in neuromorphic device technology.

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00800

Authors: Jakub Zdziebłowski, Nicolas Barreau, Paweł Zabierowski

Institutions: Warsaw University of Technology, Centre National de la Recherche Scientifique, Institut des Matériaux Jean Rouxel, Nantes Université

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funder: Politechnika Warszawska