Dual-Comb Generation in III-V Semiconductor Laser: Transverse Modes Versus Modeless Cavities
Year: 2025
Type: conference-paper
Abstract: Dual frequency-combs have been relevant for applications such as spectroscopy [1], Many methods are used to generate dual-combs like polarization multiplexing [2] or wavelength/space multiplexing [3], [4]. We demonstrated two passively mode-locked dual-comb configurations in a single Vertical External-Cavity Surface-Emitting Laser (VECSEL) using a InGaAs/GaAs based optically-pumped gain mirror (1/2-VCSEL) and a fast Semiconductor Saturable Absorber Mirror (SESAM) for an emission at$1.06\mu \mathrm{m}$with a pulse width of 5ps at 1GHz repetition rate. Fig. 1 a) shows the cavity design where two lenses are used to control the beam ratio on the gain mirror and the SESAM for a stable mode-locking state,$f_{1,2}$and$d_{1,2,3}$are chosen in order to get a stable Laguerre-Gauss (LG) transverse modes oscillations with one optical axis and two transverse states as shown in Fig. 1 b) (up), or a modeless self-imaging cavity with two optical axes as shown in Fig. 1 b) (down). Fig. 1 c) shows the temporal evolution of the dual-comb where the$\text{LG}_{00}$comb's repetition rate is$f_{rep}=1/T$and the LG03 comb's one is$f_{rep}+\Delta f$where$T$is the roundtrip time of 1 ns and$\Delta f\approx 100\text{kHz}$.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4413458416