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Inverse Design of High Power and High Voltage LDMOS Transistors Using Deep Learning-Based Sample-Efficient Surrogate Model

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Year: 2025
Type: article
Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
DOI: 10.1109/tcad.2025.3598940
Authors: Rutu Patel, Ravi S. Hegde, Nihar R. Mohapatra
Institution: Indian Institute of Technology Gandhinagar
Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Science and Engineering Research Board
Award: G4342598825
OpenAlex ID: W4413462653
FWCI: 0.693
Cites: 18
Cited by: 3
Related to: 10
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